SSF3615 Ver la hoja de datos (PDF) - Silikron Semiconductor Co.,LTD.
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SSF3615 Datasheet PDF : 5 Pages
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SSF3615
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
IGSS
VGS=±25V,VDS=0V
±100
nA
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=-250μA
-1.7 -2.3
-3
V
VGS=-4.5V, ID=-7.5A
14
19
mΩ
VGS=-10V, ID=-10A
9
11
mΩ
VDS=-5V,ID=-10A
18
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
1200
PF
Coss
VDS=-15V,VGS=0V,
F=1.0MHz
240
PF
Crss
150
PF
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
t d(on)
9
nS
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
tr
VDS=-15V,VGS=-10V,RGEN=3Ω
8.5
nS
td(off)
ID=1A
20
nS
tf
8
nS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
18
nC
Qgs
VDS=-15V,ID=-10A,VGS=-10V
5
nC
Qgd
3.5
nC
Body Diode Reverse Recovery Time
T rr
24
nS
IF=-10A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge
Q rr
12
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=-1A
-0.74 -1
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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