SSF2301B Ver la hoja de datos (PDF) - Silikron Semiconductor Co.,LTD.
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SSF2301B Datasheet PDF : 5 Pages
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SSF2301B
DESCRIPTION
The SSF2301B uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable
for use as a load switch or in PWM applications.
D
G
GENERAL FEATURES
● VDS = -20V,ID = -2.8A
RDS(ON) < 150mΩ @ VGS=-2.5V
RDS(ON) < 100mΩ @ VGS=-4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
S
Schematic diagram
Application
●PWM applications
●Load switch
●Power management
Marking and pin Assignment
SOT23 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
2301B
SSF2301B
SOT23
Ø180mm
Tape width
8 mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID
Drain Current-Continuous@ Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-20
±8
-2.8
-10
1.25
-55 To 150
Unit
V
V
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
100
℃ /W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
IDSS
VDS=-20V,VGS=0V
Gate-Body Leakage Current
IGSS
VGS=±8V,VDS=0V
Min Typ Max Unit
-20
V
-1
μA
±100
nA
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