SS32HE3/57T Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
SS32HE3/57T Datasheet PDF : 4 Pages
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SS32 thru SS36
Vishay General Semiconductor
100
TJ = 125 °C
10
TJ = 150 °C
Pulse Width = 300 µs
1 % Duty Cycle
1
TJ = 25 °C
0.1
0.01
0
SS32 - SS34
SS35 & SS36
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
1000
100
10
0.1
SS32 - SS34
SS35 & SS36
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
100
10
TA = 125 °C
1
SS32 - SS34
SS35 & SS36
0.1
TA = 75 °C
0.01
TA = 25 °C
0.001
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Current Characteristics
100
10
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AB (SMC)
Cathode Band
0.126 (3.20)
0.114 (2.90)
0.246 (6.22)
0.220 (5.59)
0.126 (3.20)
MIN.
Mounting Pad Layout
0.185 (4.69)
MAX.
0.103 (2.62)
0.079 (2.06)
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.320 REF.
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Document Number: 88751 For technical questions within your region, please contact one of the following:
Revision: 23-Jan-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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