SS32HE3/57T Ver la hoja de datos (PDF) - Vishay Semiconductors
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SS32HE3/57T Datasheet PDF : 4 Pages
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SS32 thru SS36
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL SS32
SS33
SS34
Maximum instantaneous
forward voltage (1)
3.0 A
VF
0.5
Maximum DC reverse current
at rated DC blocking voltage (1)
TA = 25 °C
TA = 100 °C
IR
0.5
20
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
SS35
SS36
0.75
UNIT
V
mA
10
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL SS32
SS33
Typical thermal resistance (1)
Note:
RθJA
RθJL
(1) P.C.B. mounted 0.55 x 0.55" (14 x 14 mm) copper pad areas
SS34
55
17
SS35
SS36
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
SS34-E3/57T
0.235
57T
SS34-E3/9AT
0.235
9AT
SS34HE3/57T (1)
0.235
57T
SS34HE3/9AT (1)
0.235
9AT
Note:
(1) Automotive grade AEC Q101 qualified
BASE QUANTITY
DELIVERY MODE
850
7" diameter plastic tape and reel
3500
13" diameter plastic tape and reel
850
7" diameter plastic tape and reel
3500
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
3.5
Resistive or Inductive Load
3.0
2.5
2.0
SS32 - SS34
SS35 & SS36
1.5
1.0
P.C.B. Mounted on
0.5 0.55 x 0.55" (14 x 14 mm)
Copper Pad Areas
0
50
70
90
110
130
150
170
Ambient Temperature (°C)
Figure 1. Forward Current Derating Curve
100
At Rated TL
8.3 ms Single Half Sine-Wave
80
60
40
20
0
1
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 88751
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 23-Jan-08
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