IL755B-2 Ver la hoja de datos (PDF) - Infineon Technologies
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IL755B-2 Datasheet PDF : 2 Pages
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IL755B
Bidirectional Input
Darlington Optocoupler
FEATURES
• Very High Current Transfer Ratio (500% min.)
IL755B-1: 750% at IF=2.0 mA, VCE=5.0 V
IL755B-2: 1000% at IF=1.0 mA, VCE=5.0 V
• BVCEO >60 V
• Isolation Test Voltage, 5300 VRMS
• AC or Polarity Insensitive Inputs
• No Base Connection
• High Isolation Resistance, 1012 Ω
• Low Coupling Capacitance
• Standard Plastic DIP Package
• Underwriters Lab Approval #E52744
•
V
DE
VDE #0884 Available with Option 1
DESCRIPTION
The IL755B is a bidirectional input, optically cou-
pled isolator consisting of two Gallium Arsenide
infrared emitters and a silicon photodarlington
sensor.
Maximum Ratings (at 25°C)
Emitter (Drive Circuit)
Continuous Forward Current ......................... 60 mA
Power Dissipation at 25°C.......................... 100 mW
Derate Linearly from 55°C .................... 1.33 mW/°C
Detector
Collector-Emitter Breakdown Voltage .............. 60 V
Emitter-Collector Breakdown Voltage ............... 12 V
Power Dissipation at 25°C Ambient ........... 200 mW
Derate Linearly from 25°C ...................... 2.6 mW/°C
Package
Isolation Test Voltage
(PK), t=1.0 sec. .................................... 5300 VRMS
Dissipation at 25°C..................................... 250 mW
Derate Linearly from 25°C ...................... 3.3 mW/°C
Creepage .................................................. ≥7.0 mm
Clearance .................................................. ≥7.0 mm
Isolation Resistance
TA=25°C≥1012 Ω
TA=100°C≥1011 Ω
Storage Temperature.................... –55°C to +150°C
Operating Temperature ................ –55°C to +100°C
Lead Soldering Time at 260°C .................... 10 sec.
Dimensions in inches (mm)
3 2 1 pin one ID
.248 (6.30)
.256 (6.50)
4 56
Anode/
Cathode
1
Cathode/
Anode
2
NC 3
6
5 Collector
4 Emitter
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
.335 (8.50)
.343 (8.70)
.048 (0.45)
.022 (0.55)
.130 (3.30)
.150 (3.81)
.031 (0.80) min. 3°–9°
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.300 (7.62)
typ.
18°
.010 (.25)
typ.
.300–.347
(7.62–8.81)
.114 (2.90)
.130 (3.0)
Electrical Characteristics TA=25°C
Sym. Min. Typ. Max. Unit Condition
Emitter
Forward Voltage(1)
VF
Detector
—
1.25 1.5 V
IF=10 mA
Breakdown Voltage,
Collector-Emitter
Leakage Current,
Collector-Emitter
Package
BVCEO 60
ICEO —
75 —
V
IC=1.0 mA
IF=0
1.0 100 nA VCE=10 V
IF=0
Current Transfer Ratio CTR
IL755B-1
IL755B-2
—
750
1000
Saturation Voltage,
VCEsat —
—
Collector-Emitter
Turn-On Time
Turn-Off Time
ton
—
—
toff
Notes:
1. Indicates JEDEC registered data.
—
%
1.0 V
200 µs
VCE=5.0 V
IF=±2.0 mA
IF=±1.0 mA
IC=10 mA
IF=±10 mA
VCC=10 V
IF=±2.0 mA
RL=100 Ω
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–157
March 2, 2000-09
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