IL755B-1(1999) Ver la hoja de datos (PDF) - Infineon Technologies

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IL755B-1
(Rev.:1999)

Bidirectional Input Darlington Optocoupler

Infineon Technologies 

IL755B

Bidirectional Input

Darlington Optocoupler

FEATURES

• Very High Current Transfer Ratio (500% min.)

IL755B-1: 750% at IF=2.0 mA, VCE=5.0 V

IL755B-2: 1000% at IF=1.0 mA, VCE=5.0 V

• BVCEO >60 V

• Isolation Test Voltage, 5300 VRMS

• AC or Polarity Insensitive Inputs

• No Base Connection

• High Isolation Resistance, 1012 Ω

• Low Coupling Capacitance

• Standard Plastic DIP Package

• Underwriters Lab Approval #E52744

• VDE #0884 Available with Option 1

DESCRIPTION

The IL755B is a bidirectional input, optically cou-

pled isolator consisting of two Gallium Arsenide

infrared emitters and a silicon photodarlington

sensor.

Maximum Ratings (at 25°C)

Emitter (Drive Circuit)

Continuous Forward Current ......................... 60 mA

Power Dissipation at 25°C.......................... 100 mW

Derate Linearly from 55°C .................... 1.33 mW/°C

Detector

Collector-Emitter Breakdown Voltage .............. 60 V

Emitter-Collector Breakdown Voltage ............... 12 V

Power Dissipation at 25°C Ambient ........... 200 mW

Derate Linearly from 25°C ...................... 2.6 mW/°C

Package

Isolation Test Voltage

(PK), t=1.0 sec. .................................... 5300 VRMS

Dissipation at 25°C..................................... 250 mW

Derate Linearly from 25°C ...................... 3.3 mW/°C

Creepage ..............................................7.0 min mm

Clearance ..............................................7.0 min mm

Isolation Resistance

TA=25°C≥1012 Ω

TA=100°C≥1011 Ω

Storage Temperature.................... –55°C to +150°C

Operating Temperature ................ –55°C to +100°C

Lead Soldering Time at 260°C .................... 10 sec.

Dimensions in inches (mm)

.248 (6.30)

.256 (6.50)

.039

(1.00)

Min.

4°

typ.

.018 (0.45)

.022 (0.55)

321

4 56

pin one ID

Anode/

Cathode

1

Catho e/ 2

Anode

NC 3

6 Base

5 Collector

4 Emitter

.335 (8.50)

.343 (8.70)

.048 (0.45)

.022 (0.55)

.300 (7.62)

typ.

.130 (3.30)

.150 (3.81)

.031 (0.80) min. 3°–9°

.031 (0.80)

.035 (0.90)

.100 (2.54) typ.

18°

.010 (.25)

typ.

.300–.347

(7.62–8.81)

.114 (2.90)

.130 (3.0)

Electrical Characteristics TA=25°C

Sym. Min.

Emitter

Forward Voltage(1)

VF

—

Detector

Breakdown Voltage, BVCEO 60

Collector-Emitter

Leakage Current,

Collector-Emitter

ICEO —

Package

Current Transfer Ratio CTR

IL755B-1

IL755B-2

750

1000

Saturation Voltage,

Collector-Emitter

VCEsat —

Turn-On Time

Turn-Off Time

ton

—

toff

Notes:

1. Indicates JEDEC registered data.

Typ.

1.25

75

1.0

—

—

—

Max.

1.5

—

100

—

1.0

200

Unit Condition

V

IF=10 mA

V

IC=1.0 mA

IF=0

nA VCE=10 V

IF=0

% VCE=5.0 V

IF=±2.0 mA

IF=±1.0 mA

V

IC=10 mA

IF=±10 mA

µs VCC=10 V

IF=±2.0 mA

RL=100 Ω

Infineon Technologies, Corp. • Optoelectronics Division • Cupertino, CA (formerly Siemens Microelectronics, Inc.)

www.infineon.com/opto • 1-800-777-4363

1

April 29, 1999

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