SS12P4C Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
SS12P4C Datasheet PDF : 5 Pages
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3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
D = 0.2 D = 0.3 D = 0.5 D = 0.8
D = 0.1
D = 1.0
T
D = tp/T
tp
1
2
3
4
5
6
7
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
100
10
TA = 100 °C
TA = 125 °C
1
TA = 25 °C
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100
TA = 125 °C
10
TA = 100 °C
1
TA = 25 °C
0.1
0.01
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
SS12P4C
Vishay General Semiconductor
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
100
Junction to Ambient
10
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 11-Dec-14
3
Document Number: 89141
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