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DTA123E

PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

ON Semiconductor 

DTA114E SERIES

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Base Cutoff Current (VCB = 50 V, IE = 0)

Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0)

Emitter–Base Cutoff Current

(VEB = 6.0 V, IC = 0)

DTA114E

DTA124E

DTA144E

DTA114Y

DTA114T

DTA143T

DTB113E

DTA123E

DTA143E

DTA143Z

ICBO

—

ICEO

—

IEBO

—

—

—

—

—

—

—

—

—

—

—

100

nAdc

—

500

nAdc

—

0.5

mAdc

—

0.2

—

0.1

—

0.2

—

0.9

—

1.9

—

4.3

—

2.3

—

1.5

—

0.18

Collector–Base Breakdown Voltage (IC = 10 µA, IE = 0)

V(BR)CBO

50

—

—

Vdc

Collector–Emitter Breakdown Voltage (2.) (IC = 2.0 mA, IB = 0) V(BR)CEO

50

—

—

Vdc

ON CHARACTERISTICS (2.)

DC Current Gain

(VCE = 10 V, IC = 5.0 mA)

DTA114E

DTA124E

DTA144E

DTA114Y

DTA114T

DTA143T

DTB113E

DTA123E

DTA143E

DTA143Z

hFE

35

60

—

60

100

—

80

140

—

80

140

—

160

250

—

160

250

—

3.0

5.0

—

8.0

15

—

15

27

—

80

140

—

Collector–Emitter Saturation Voltage

(IC = 10 mA, IE = 0.3 mA) DTA144E/DTA114Y

(IC = 10 mA, IE = 0.3 mA) DTB113E/DTA143E

(IC = 10 mA, IB = 5 mA) DTA123E

(IC = 10 mA, IB = 1 mA) DTA114T/DTA143T/

(IC = 10 mA, IB = 1 mA) DTA143Z/DTA124E

Output Voltage (on)

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ)

(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ)

DTA114E

DTA124E

DTA114Y

DTA114T

DTA143T

DTB113E

DTA123E

DTA143E

DTA143Z

DTA144E

2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%

VCE(sat)

—

VOL

—

—

—

—

—

—

—

—

—

—

—

0.25

Vdc

Vdc

—

0.2

—

0.2

—

0.2

—

0.2

—

0.2

—

0.2

—

0.2

—

0.2

—

0.2

—

0.2

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