SPA11N60C2 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

SPA11N60C2

Cool MOS Power Transistor

Infineon Technologies 

Final data

SPP11N60C2, SPB11N60C2

SPA11N60C2

Electrical Characteristics

Parameter

Symbol Conditions

Characteristics

Inverse diode continuous

forward current

Inverse diode direct current,

pulsed

Inverse diode forward voltage

Reverse recovery time

Reverse recovery charge

Peak reverse recovery current

Peak rate of fall of reverse

recovery current

IS

TC=25°C

ISM

VSD

trr

Qrr

Irrm

dirr/dt

VGS=0V, IF=IS

VR=350V, IF =IS ,

diF /dt=100A/µs

Tj=25°C

Values

Unit

min. typ. max.

-

-

11 A

-

-

22

-

1

1.2 V

-

650 1105 ns

-

7.9

- µC

-

30

-A

-

600

- A/µs

Typical Transient Thermal Characteristics

Symbol

Value

Unit Symbol

SPP_B

SPA

Rth1

0.015

0.015 K/W Cth1

Rth2

0.034

0.03

Cth2

Rth3

0.042

0.043

Cth3

Rth4

0.116

0.119

Cth4

Rth5

0.149

0.35

Cth5

Rth6

0.059

2.499

Cth6

Value

SPP_B

SPA

0.0002121 0.00012

0.0007091 0.000455

0.001184 0.000638

0.001527 0.00144

0.011

0.00737

0.089

0.412

Unit

Ws/K

Ptot (t)

Tj R th1

C th 1

C th 2

Rth,n Tcase External Heatsink

C th,n

Tamb

Page 4

2002-08-12

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