SPF-5122Z Ver la hoja de datos (PDF) - RF Micro Devices
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SPF-5122Z Datasheet PDF : 12 Pages
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SPF-5122Z
Preliminary
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (lD)
120
mA
Max Device Voltage (VD)
5.5
V
Max RF Input Power
27
dBm
Max Dissipated Power
660
mW
Max Junction Temperature (TJ)
150
°C
Operating Temperature Range (TL)
-40 to + 85
°C
Max Storage Temperature
-65 to +150
°C
ESD Rating - Human Body Model
(HBM)
Class 1B
Moisture Sensitivity Level (MSL)
MSL 1
Operation of this device beyond any one of these limits may cause permanent
damage. For reliable continuous operation, the device voltage and current
must not exceed the maximum operating values specified in the table on
page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l and TL=TLEAD
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Typical RF Performance - Broadband Application Circuit with VD=5V, ID=90mA
Parameter Unit 0.1 0.4 0.9 1.5 1.9 2.2 2.5 3.5 3.8
GHz* GHz GHz GHz GHz GHz GHz GHz GHz
Small Signal Gain
dB
27.0
24.0
19.0
15.0
13.0
12.0
11.0
6.0
7.0
Noise Figure
dB
0.42
0.47
0.59
0.70
0.64
0.73
0.86
1.35
1.27
Output IP3
dBm
33.0
36.0
38.0
39.5
40.5
41.0
41.5
40.5
41.5
Output P1dB
dBm
22.3
22.7
23.0
23.2
23.4
23.7
23.9
22.2
22.9
Input Return Loss
dB
-9.5
-10.0
-14.5
-20.0
-21.0
-22.0
-22.5
-15.0
-11.5
Output Return Loss
dB
-29.0
-19.5
-17.0
-14.0
-13.0
-12.5
-12.5
-7.5
-15.5
Reverse Isolation
dB
-32.0
-29.0
-24.0
-20.0
-18.5
-17.5
-16.5
-15.5
-13.5
Test Conditions: VD=5V, IDQ=90mA, OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, TL=25°C, ZS=ZL=50Ω, *Bias Tee Data @ 100MHz
1. Input RL can be improved in the 800MHz to 1000MHz band by adding a series inductor between the DC block and device input.
Typical RF Performance - Broadband Application Circuit with VD=3V, ID=58mA
Parameter Unit 0.1 0.4 0.9 1.5 1.9 2.2 2.5 3.5 3.8
GHz* GHz GHz GHz GHz GHz GHz GHz GHz
Small Signal Gain
dB
26.0
23.0
18.5
14.5
12.5
11.5
10.5
6.0
6.5
Noise Figure
dB
0.35
0.44
0.58
0.65
0.61
0.69
0.79
1.25
1.19
Output IP3
dBm
31.5
33.0
34.5
36.0
36.5
37.0
37.5
37.0
37.5
Output P1dB
dBm
18.8
18.9
19.1
19.4
19.9
20.2
20.1
18.9
19.2
Input Return Loss
dB
-8.0
-9.0
-13.0
-16.5
-18.5
-19.0
-19.0
-13.5
-10.0
Output Return Loss
dB
-26.0
-28.5
-23.5
-18.0
-16.5
-16.0
-15.5
-9.0
-14.0
Reverse Isolation
dB
-31.0
-28.0
-23.0
-19.0
-17.5
-16.0
-15.0
-14.5
-12.5
Test Conditions: VD=3V, IDQ=58mA, OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, TL=25°C, ZS=ZL=50Ω, *Bias Tee Data @ 100MHz
1. Input RL can be improved in the 800MHz to 1000MHz band by adding a series inductor between the DC block and device input.
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EDS-105470 Rev E
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