2N03L06 Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
2N03L06 Datasheet PDF : 8 Pages
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SPI80N03S2L-06
SPP80N03S2L-06,SPB80N03S2L-06
OptiMOS® Power-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• Low On-Resistance RDS(on)
• Excellent Gate Charge x RDS(on)
product (FOM)
• Superior thermal resistance
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
P- TO262 -3-1
Product Summary
VDS
30 V
RDS(on) max. SMD version 5.9 mΩ
ID
80 A
P- TO263 -3-2
P- TO220 -3-1
Type
SPP80N03S2L-06
SPB80N03S2L-06
SPI80N03S2L-06
Package
P- TO220 -3-1
P- TO263 -3-2
P- TO262 -3-1
Ordering Code
Q67042-S4088
Q67042-S4089
Q67042-S4092
Marking
2N03L06
2N03L06
2N03L06
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current 1)
ID
TC=25°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=20A, VDD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax2)
Reverse diode dv/dt
IS=80A, VDS=24V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID puls
EAS
EAR
dv/dt
VGS
Ptot
Tj , Tstg
Value
80
80
320
240
15
6
±20
150
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2003-05-09
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