SP8K64 Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
SP8K64 Datasheet PDF : 5 Pages
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Transistors
4V Drive Nch+Nch MOSFET
SP8K64
SP8K64
zStructure
Silicon N-channel MOSFET
zDimensions (Unit : mm)
SOP8
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small surface Mount Package (SOP8).
zApplication
Switching
Each lead has same dimensions
zPackaging specifications
Type
SP8K64
Package
Code
Basic ordering unit (pieces)
Taping
TB
2500
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Channel temperature
Range of storage temperature
∗1 Pw 10µs, Duty cycle 1%
∗2 Mounted on a ceramic board.
Tch
Tstg
Limits
30
±20
±9
±36
1.6
36
2.0
1.4
150
−55 to +150
zEquivalent circuit
(8) (7)
(6) (5)
(8) (7) (6) (5)
∗2
∗2
(1) (2) (3) (4)
∗1
∗1
(1) (2)
(3) (4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
Unit
V
V
A
A
A
A
W/TOTAL
W/ELEMENT
°C
°C
1/4
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