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TSM108(2001) Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
TSM108
(Rev.:2001)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
TSM108 Datasheet PDF : 13 Pages
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TSM108
u Vin = Vcc = 12V, Iout = 625mA, Vout = 6V
u Mosfet: Pchannel Mosfet: Rdson = 100m,
Ciss = 1nF.
u Driver: TSM108
u PWM frequency: 100kHz
u Free wheel diode: Vf = 0.7V
u Shunt: Rsense = 330m
The efficiency (η) of a regulator is defined as the
ratio of the charging power (Pout) to the total
power from the supply (Pin).
u Eq3: η = Pout/Pin
The output power is:
Pout=Iout x Vout where Iout is the charging
current (Vsense/Rsense = 625mA at full load) and
Vout is the regulated voltage (Vref(1+R1/R2) =
6V).
Pout = 3.75W
The input power can be found by adding the
output power (Pout) to the total power loss in the
circuit (Plosses) i.e.
u Pin = Pout + Plosses
The power is lost partly on the chip and partly on
the external components which are mainly the
diode, the switch and the shunt. Plosses = Pchip +
Pswitch + Pdiode + Pshunt.
In Plosses, we neglect the losses in the inductor
(because the current through the inductor is
smoothened making the serial resistor of the
inductor very low), and the losses in the Gate
(charge and discharge).
a. The power lost in the chip is Pchip = Vcc x Icc.
(Vcc = 12V, Icc = 6mA) Pchip = 72m
b. The power lost in the switch depends on the ON
resistance of the switch and the current passing
through it. Also there is power loss in the switch
during switching time (commutation losses) and
that depends on the switching frequency and the
rise and fall time of the switching signal.
Rise time (Pchannel goes off) depends on the
output source current of the TSM108 and the input
gate capacitance of the Mosfet.
Trise = Ciss x Vgate / Isource
Fall time (Pchannel goes on) depends on the
output sink current of the TSM108 and the input
gate capacitance of the Mosfet .
Tfall = Ciss x Vgate / Isink
Trise = 150ns and Tfall = 300ns (Vgate is approx
12V).
u Pswitch = Prise + Pfall + Pon
where:
Prise = Iout x (Vcc+Vf) x Trise x PWMfreq / 2
Prise = 625mA x 12.7 x 150ns x 100kHz / 2.
Prise = 59.5mW
where:
Pfall = Iout x (Vcc+Vf) x Tfall x PWMfreq / 2
Pfall = 625mA x 12.7 x 300ns x 100kHz / 2.
Pfall = 119.1mW
where:
Pon = Rdson x Iout² x D (where D is the duty cycle
- at full charge, D can be approximated to 1)
Pon = 100mx 625mA². Pon = 39.1mW
u Pswitch = 217.7mW
c. The power lost in the fly back diode is Pdiode =
Vf x Iout(1-D) where D = Vout/Vcc = 6/12. D = 0.5
u Pdiode=219mW
d. the power lost in the sense resistor (shunt
resistor) is Pshunt = Rsense x Iout²
u Pshunt = 129mW
Therefore,
Plosses = Pchip+Pswitch+Pdiode+Pshunt
= 72mW + 217.7mW + 219mW + 129mW
u Plosses = 638mW
The yield (efficiency) is
u Pout / Pin = 3.75 / (3.75 + 0.638) = 85.5%
η = 85.5%
The following table gives a tentative efficiency
improvement view following the choice of some
external components. Be aware that some of the
following choices have non negligible cost effects
on the total application.
Improved efficiency - by changing the external components value one by one
Rsense
330m
220m
-
-
-
Iout
625mA
936mA
-
-
-
Vout (R1/R2)
6V
-
7.5V
-
-
Rdson
100m
-
-
140m
-
Ciss
0nF
-
-
0.85nF
-
PWM Freq
100kHz
-
-
-
50kHz
Free Wheel
0.7V
-
-
-
-
Yield
85.5%
85.6%
88.9%
85.7%
87.3%
Cost influence
-
=
=
<
>
-
-
-
-
-
-
0.3V
88.1%
>>
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