MCT5211 Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
MCT5211 Datasheet PDF : 3 Pages
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Figure 10. Collector current vs. LED current
80
Ta = 25°C
70
Vce
10 V
60
5V
50
40
2V
1V
30
0.4 V
20
10
0
0
5
10
15
20
25
IF - LED CURRENT - mA
Figure 11. Collector current vs. LED current
100
Ta = 25°C
10
150VV
2V
1V
0.4 V
Vce
1
.1
.1
1
10
100
IF - LED CURRENT - mA
Figure 12. Transistor current gain vs. base current
800
700
Ta = 25°C
600
500
400
300
200
100
.1
Vce
10 V
5V
2V
1V
0.4 V
1
10
100
Ib - BASE CURRENT - µA
1000
Figure 13. Transfer curve
100
800
Vce =10V, Ta =25°C
10
700
Ice = Icb x HFE
1
600
.1
500
.1
1
10
100
1000
Icb - PHOTOCURRENT - µA
Figure 14. Transfer curve
100
700
Vce = 0.4V, Ta = 25°C
600
Ice = Icb x HFE
10
500
400
1
300
200
.1
100
.1
1
10
100
1000
Icb - PHOTOCURRENT - µA
Figure 15. Propagation delay vs. base emitter resistor
70
60
Ta = 25°C
tPLH
50
IF = 1mA
RL= 10K
40
Vth = 1.5V
Vce = 5V
30
20
tPHL
10
10
5
10 6
10 7
Rbe - BASE EMITTER RESISTOR -
Figure 16. Propagation delay vs. base emitter resistor
50
40
tPLH
30
20
Ta = 25°C
IF = 1.6mA
RL= 4.7K
Vth = 1.5V
Vce = 5V
10
tPHL
0
10
5
10 6
10 7
Rbe - BASE EMITTER RESISTOR -
Figure 17. Propagation delay vs. base emitter resistor
40
35
30
Ta = 25°C
25
tPLH
IF = 3mA
RL= 3K
20
Vth = 1.5V
Vce = 5V
15
10
tPHL
5
0
10
4
10 5
10 6
10 7
Rbe - BASE EMITTER RESISTOR -
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–210
MCT5210/5211
April 12, 2001-15
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