Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Número de pieza
componentes Descripción
G6742-003 Ver la hoja de datos (PDF) - Hamamatsu Photonics
Número de pieza
componentes Descripción
Fabricante
G6742-003
InGaAs PIN photodiode
Hamamatsu Photonics
G6742-003 Datasheet PDF : 2 Pages
1
2
PHOTODIODE
InGaAs PIN photodiode
G6742 series
Surface-mount type
Features
l
Small chip carrier package
l
High reliability
l
Low price
Applications
l
Laser diode monitors
s
General ratings
Parameter
Package
Active area
G6742-003
φ
0.3
Ceramic base
s
Absolute maximum ratings
Parameter
Symbol
Reverse voltage
V
R
Max.
Operating
temperature
Topr
Storage temperature Tstg
* No condensation
G6742-003
20
-40 to +85 *
-55 to +125 *
s
Electrical and optical characteristics (Ta=25
°
C)
Parameter
Symbol
Condition
Min.
Spectral response
range
λ
-
Peak sensitivity
wavelength
λ
p
-
Photo sensitivity
S
λ
=1.3 µm
λ
=1.55 µm
0.8
0.85
Dark current
I
D
V
R
=5 V
-
Cut-off frequency
fc
V
R
=5 V, R
L
=50
Ω
-3 dB
-
Terminal
capacitance
Ct
f=1 MHz
V
R
=5 V
-
Shunt resistance
Rsh V
R
=10 mV
-
Detectivity
D
∗
λ
=
λ
p
-
Noise equivalent
power
NEP
λ
=
λ
p
-
G6742-003
Typ.
0.9 to 1.7
1.55
0.9
0.95
0.3
300
10
1000
5 × 10
12
4 × 10
-15
Max.
-
-
-
-
1.5
-
-
-
-
-
G6742-01
Unit
-
φ
1.0
mm
G6742-01
Unit
10
V
°
C
°
C
G6742-01
Min.
Typ.
Max.
Unit
-
0.9 to 1.7
-
µm
-
1.55
-
0.8
0.9
-
0.85
0.95
-
-
1
5
-
35
-
µm
A/W
nA
MHz
-
90
-
pF
-
100
-
M
Ω
-
5 × 10
12
-
cm · Hz
1/2
/W
-
2 × 10
-14
-
W/Hz
1/2
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]