MX29F001BPC-12 Ver la hoja de datos (PDF) - Macronix International

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componentes Descripción

Fabricante

MX29F001BPC-12

1M-BIT [128K x 8] CMOS FLASH MEMORY

Macronix International 

MX29F001T/B

AC CHARACTERISTICS TA = 0oC to 70oC, VCC = 5V ± 10%(TA=0oC to 70oC, 5V ± 5% for MX29F001T/B-55)

29F001T/B-70 29F001T/B-90 29F001T/B-12

SYMBOL PARAMETER

MIN. MAX. MIN. MAX. MIN. MAX. UNIT CONDITIONS

tACC

Address to Output Delay

70

90

120 ns CE=OE=VIL

tCE

CE to Output Delay

70

90

120 ns OE=VIL

tOE

OE to Output Delay

40

40

50 ns CE=VIL

tDF

OE High to Output Float (Note1)

0

20

0 30

0

30 ns CE=VIL

tOH

Address to Output hold

0

0

0

ns CE=OE=VIL

SYMBOL PARAMETER

tACC

Address to Output Delay

tCE

CE to Output Delay

tOE

OE to Output Delay

tDF

OE High to Output Float (Note1)

tOH

Address to Output hold

TEST CONDITIONS:

• Input pulse levels: 0.45V/2.4V for 70ns max. ; 0V/3.0V for

55ns

• Input rise and fall times: < 10ns for 70ns max; < 5ns for 55ns

• Output load: 1 TTL gate + 100pF (Including scope and jig) for

70ns max. ; 1 TTL gate + 30pF (Including scope and jig) for

55ns max.

• Reference levels for measuring timing : 0.8V & 2.0V for 70ns

max.; 1.5V for 55ns

29F001T/B-55

MIN. MAX.

55

55

30

0

20

0

UNIT CONDITIONS

ns CE=OE=VIL

ns OE=VIL

ns CE=VIL

ns CE=VIL

ns CE=OE=VIL

NOTE:

1. tDF is defined as the time at which the output achieves the

open circuit condition and data is no longer driven.

P/N: PM0515

REV. 2.1, JUN. 14, 2001

14

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