SMK0465IS Ver la hoja de datos (PDF) - Kodenshi Auk Co., LTD
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SMK0465IS Datasheet PDF : 8 Pages
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SMK0465IS
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATION
Features
• Drain-source breakdown voltage: BVDSS=650V
• Low gate charge: Qg=11.2nC (Typ.)
• Low drain-source On-resistance: RDS(on)=3Ω (Max.)
• RoHS compliant device
• Halogen free package
Ordering Information
Part Number
Marking
Package
SMK0465IS
SMK0465
I-PAK
(Short lead)
GDS
I-PAK (Short Lead)
Marking Information
SMK
0465
YWW
Column 1, 2: Device Code
Column 3: Production Information
e.g.) YWW
-. YWW: Date Code (year, week)
Absolute maximum ratings (TC=25°C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) *
Drain current (Pulsed) *
Single avalanche current (Note 2)
Single pulsed avalanche energy (Note 2)
Repetitive avalanche current (Note 1)
Repetitive avalanche energy (Note 1)
Power dissipation
Junction temperature
Storage temperature range
VDSS
VGSS
Tc=25°C
ID
Tc=100°C
IDM
IAR
EAS
IAR
EAR
PD
TJ
Tstg
* Limited only maximum junction temperature
Rev. date: 16-JUL-12
KSD-T6Q016-000
Rating
Unit
650
V
±30
V
4
A
2.5
A
16
A
4
A
81.5
mJ
4
A
3.4
mJ
48
W
150
°C
-55~150
°C
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