SMA5104
Electrical characteristics
N channel
Symbol
Specification
Unit
min
typ
max
V(BR)DSS
60
V
IGSS
±500
nA
IDSS
250
µA
VTH
2.0
4.0
V
Re(yfs)
2.2
3.3
S
RDS(ON)
0.17
0.22
Ω
Ciss
300
pF
Coss
160
pF
ton
35
ns
toff
35
ns
VSD
1.1
1.5
V
trr
140
ns
Conditions
ID=250µA, VGS=0V
VGS=±20V
VDS=60V, VGS=0V
VDS=10V, ID=250µA
VDS=10V, ID=5A
VGS=10V, ID=5A
VDS=25V, f=1.0MHz,
VGS=0V
ID=5A, VDD 30V, VGS=10V,
see Fig. 3 on page 16.
ISD=5A, VGS=0V
ISD=±100mA
P channel
Specification
Unit
min
typ
max
–60
V
500
nA
–250
µA
–2.0
–4.0
V
1.6
2.2
S
0.38
0.55
Ω
270
pF
170
pF
60
ns
60
ns
–4.4
–5.5
V
150
ns
(Ta=25°C)
Conditions
ID=–250µA, VGS=0V
VGS= 20V
VDS=–60V, VGS=0V
VDS=–10V, ID=–250µA
VDS=–10V, ID=–4A
VGS=–10V, ID=–4A
VDS=–25V, f=1.0MHz,
VGS=0V
ID=–4A, VDD –30V, VGS=–10V,
see Fig. 4 on page 16.
ISD=–4A, VGS=0V
ISD= 100mA
Characteristic curves
Re(yfs)-ID Characteristics (Typical)
N-ch
(VDS=10V)
10
5
5
P-ch
(VDS=–10V)
1
0.5
0.3
0.08
1000
500
100
50
TC=–40°C
25°C
125°C
1
TC=–40°C
25°C
125°C
0.5
0.5 1
ID (A)
5 10
0.3
–0.1
–0.5 –1
ID (A)
N-ch
Capacitance-VDS Characteristics (Typical)
VGS=0V
f=1MHz
700
500
Ciss
P-ch
Ciss
Coss
100
–5 –8
VGS=0V
f=1MHz
Coss
50
Crss
Crss
10
0
10
20
30
40
50
VDS (V)
10
0
–10
–20
–30
–40
–50
VDS (V)
IDR-VSD Characteristics (Typical)
N-ch
P-ch
10
–8
8
6
10V
4
2
5V
VGS=0V
0
0
0.5
1.0
1.5
VSD (V)
–6
–10V
–4
–2
–5V
VGS=0V
0
0
–1
–2
–3
–4
–5
VSD (V)
Safe Operating Area (SOA)
N-ch
(TC=25°C)
20
ID (pulse) max
10
5
LIMITED
(ON)
RDS
1
0.5
0.1
0.5 1
5 10
VDS (V)
50 100
–10
ID (pulse) max
–5
P-ch
(TC=25°C)
1ms 100µs
–1
–0.5
–0.1
–0.5 –1
–5 –10
VDS (V)
–50 –100
PT-Ta Characteristics
30
With Silicone Grease
25
Natural Cooling
All Circuits Operating
20
15
10
5 Without Heatsink
0
0
50
100
150
Ta (°C)
103