DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

SM15T82CAY Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
SM15T82CAY
ST-Microelectronics
STMicroelectronics ST-Microelectronics
SM15T82CAY Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Characteristics
1
Characteristics
SM15TY
Table 1.
Symbol
Absolute maximum ratings (Tamb = 25 °C)
Parameter
Value
Unit
VPP Peak pulse voltage
ISO 10605 (C = 330 pF, R = 330 Ω):
Contact discharge
30
Air discharge
30
ISO 10605 (C = 150 pF, R = 330 Ω):
kV
Contact discharge
30
Air discharge
30
PPP Peak pulse power dissipation(1)
Tj initial = Tamb
1500
W
Tstg Storage temperature range
-65 to + 150 °C
Tj
Operating junction temperature range
-40 to + 150 °C
TL Maximum lead temperature for soldering during 10 s.
260
°C
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Figure 1. Electrical characteristics - definitions
I
I
Symbol Parameter
VRM Stand-off voltage
Unidirectional IF
IPP
VBR Breakdown voltage
VCL Clamping voltage
IRM
Leakage current @ VRM
VCLVBR VRM
VF
V
VCLVBR VRM
IR
IRM
V
IPP
Peak pulse current
IRM
αT
Voltage temperature coefficient
IR
IRM VRMVBR VCL
IR
VF
Forward voltage drop
RD
Dynamic resistance
IPP
Bidirectional
IPP
Figure 2.
Pulse definition for electrical characteristics
%IPP
100
Pulse waveform
50
tr = rise time (µs)
tp = pulse duration time (µs)
0
tr
tp
t
2/12
Doc ID 17865 Rev 3

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]