SLD322V Ver la hoja de datos (PDF) - Sony Semiconductor
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SLD322V Datasheet PDF : 7 Pages
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SLD322V
High Power Density 0.5W Laser Diode
Description
The SLD322V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the
SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be
achieved by QW-SCH structure∗2.
∗1 MOCVD: Metal Organic Chemical Vapor Deposition
∗2 QW-SCH: Quantum Well Separate Confinement Heterostructure
Features
• High power
Recommended optical power output: Po = 0.5W
• Low operating current: Iop = 0.75A (Po = 0.5W)
Applications
• Solid state laser excitation
• Medical use
• Material processes
• Measurement
Structure
GaAlAs quantum well structure laser diode
Absolute Maximum Ratings (Tc = 25°C)
• Optical power output
Po
0.55
W
• Reverse voltage
VR LD
2
V
PD
15
V
• Operating temperature (Tc) Topr
–10 to +30
°C
• Storage temperature
Tstg
–40 to +85
°C
Pin Configuration
2
1
3
Bottom View
1. LD cathode
2. PD anode
3. COMMON
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E93205A81-PS
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