SK25GB063 Ver la hoja de datos (PDF) - Semikron
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SK25GB063 Datasheet PDF : 5 Pages
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SK25GB063
SEMITOP® 1
IGBT Module
SK25GB063
SK25GAL063
SK25GAR063
Preliminary Data
Features
!"
!#$"!
" %& $
'
(
)( * + , - ./ 0/1
Typical Applications
2
%3
2
)#2
Characteristics
Symbol Conditions
Inverse Diode
6C 4 6-
%C 4 10 :? 6&- 4 8 6
6C8
C
%<<=
I
-
%C 4 10 :
L 4 "088 :LB
64 /886
< 7"
Freewheeling Diode
6C 4 6-
%C 4 10 :? 6&- 4 8 6
6C8
C
%<<=
I
-
< 7" C
=
%C 4 10 :
L 4 "088 :LB
6<4/886
N =9
min.
$7 4 10 53,
$7 4 910 53,
$7 4 910 5
$7 4 910 5
$7 4 910 5
$7 4 10 53,
$7 4 910 53,
$7 4 910 5
$7 4 910 5
$7 4 910 5
typ.
9+D0
9+D
8+;0
11
9.
1
8+10
9+D0
9+D
8+;0
11
9.
1
8+10
9/
max. Units
9+F
6
9+F0
6
8+H
6
/1
G
:
B
J
9+F
KLM
9+F
6
9+F0
6
8+H
6
/1
6
:
B
J
9+F
KLM
9+0
!
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
GAL
GAR
05-04-2007 SCT
© by SEMIKRON
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