SIM200D06AV2 Ver la hoja de datos (PDF) - SemiWell Semiconductor

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Fabricante

SIM200D06AV2

“HALF-BRIDGE” IGBT

SemiWell Semiconductor 

Preliminary

SIM200D06AV2

“HALF-BRIDGE” IGBT

Feature

▪ Smart field stopper +Trench

design technology

▪ Low VCE (sat)

▪ Low Turn-off losses

▪ Short tail current for over 20KHz

Applications

▪ Motor controls

▪ VVVF inverters

▪ Inverter-type welding MC over 18KHZ

▪ SMPS, Electrolysis

▪ UPS/EPS, Robotics

Absolute Maximum Ratings @ Tj=25℃ (Per Leg)

PKG: V2=48mm

Symbol

Parameter

Condition

VCES

Collector-to-Emitter Voltage

TC = 25℃

VGE

Gate emitter voltage

IC

Continuous Collector Current

ICP

Pulsed collector current

IF

Diode Continuous Forward Current

IFM

Diode Maximum Forward Current

tp

Short circuit test, VGE = 15V, VCC = 360V

TC = 80℃ (25℃)

TC = 25℃

TC = 80℃ (25℃)

TC = 25℃

TC = 150℃ (25℃)

Viso

Isolation Voltage test

AC @ 1 minute

Weight Weight of Module

Tj

Junction Temperature

Tstg

Storage Temperature

Md

Mounting torque with screw : M5

Terminal connection torque : M5

VCES = 600V

Ic= 200A

VCE(ON) typ. = 1.6V

@Ic= 200A

Ratings

600

± 20

200 (290)

450

200 (290)

400

6 (8)

2500

190

-40 ~ 150

-40 ~ 125

2.0

2.0

Unit

V

V

A

A

A

A

㎲

V

g

℃

℃

N.m

N.m

Static Characteristics @ Tj = 25℃ (unless otherwise specified)

Parameters

Min Typ Max Unit

Test conditions

VCE(ON) Collector-to-Emitter Saturation Voltage

VGE(th) Gate Threshold Voltage

ICES Zero Gate Voltage Collector Current

IGES Gate-to-Emitter Leakage Current

VF

Forward voltage drop

RGINT Integrated gate resistor

1.60

1.95

5.8

6.5

IC = 200A, VGE = 15V

V

VCE = VGE, IC = 4㎃

ㅡ

ㅡ

5.0

㎃

VGE= 0V, VCE = 600V

ㅡ

ㅡ

400

㎁

VCE = 0V, VGE = 20V

1.6

1.9

V

IF = 200A

ㅡ

2

ㅡ

Ω

-1-

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