IRF540PBF Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
IRF540PBF Datasheet PDF : 9 Pages
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IRF540, SiHF540
Vishay Siliconix
3000
2400
1800
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
Ciss
1200
600
0
100
91021_05
Coss
Crss
101
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
150 °C
101
25 °C
100
10-1
0.4
91021_07
VGS = 0 V
0.8
1.2
1.6
VSD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20 ID = 17 A
16
12
VDS = 80 V
VDS = 50 V
VDS = 20 V
8
4
0
0
91021_06
For test circuit
see figure 13
10 20 30 40 50 60 70
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
103
Operation in this area limited
5
by RDS(on)
2
102
10 µs
5
100 µs
2
1 ms
10
91021_08
5
2
1
0.1 2
TC = 25 °C
TJ = 175 °C
Single Pulse
5 1 2 5 10 2
10 ms
5 102 2 5 103 2
5 104
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 91021
S11-0510-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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