SI9987 Ver la hoja de datos (PDF) - Vishay Semiconductors
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SI9987 Datasheet PDF : 6 Pages
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Si9987
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGSa
Parameter
Limit
Unit
Voltage on any Pin with Respect to Ground
Voltage on Pins 5, 8 with Respect to Ground
Voltage on Pins 1, 4
- 0.3 V to VDD + 0.3 V
- 1 V to VDD + 1 V
V
- 0.3 V to GND + 1 V
Maximum VDD
Peak Output Current
15
V
1.5
A
Storage Temperature
Maximum Junction Temperature (TJ)
Power Dissipationb
θJA
Continuous IOUT Current (TJ = 135 °C)c
Operating Temperature Range
TA = 25 °C
TA = 70 °C
TA = 85 °C
Si9987CY
Si9987DY
- 65 to 150
150
1
100
± 1.02
± 0.75
± 0.65
0 to 70
- 45 to 85
°C
W
°C/W
A
°C
Notes:
a. Device mounted with all leads soldered or welded to PC board.
b. Derate 10 mW/°C above 25 °C.
c. TJ = TA + (PD x θJA), PD = power dissipation.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE
Parameter
VDD
Maximum Junction Temperature (TJ)
Limit
Unit
3.8 to 13.2
V
135
°C
SPECIFICATIONS
Parameter
Input
Symbol
Test Conditions Unless Specified
VDD = 3.8 V to 13.2 V
SA at GND, SB at GND
Mina
Limits
Unit
Typb
Maxa
Input Voltage High
Input Voltage Low
Input Current with Input Voltage High
Input Current with Input Voltage Low
Output
VINH
VINL
IINH
IINL
VIN = 2 V
VIN = 0 V
2
V
1
1
µA
-1
Output Voltage Highc
Output Voltage Lowc
Output Leakage Current Low
Output Leakage Current High
Output V Clamp High
Output V Clamp Low
Supply
VOUTH
VOUTL
IOLL
IOLH
VCLH
VCLL
IOUT = - 1 mA
VDD = 10.8 V
VDD = 4.5 V
IOUT = - 500 mA
VDD = 10.8 V
VDD = 4.5 V
IOUT = - 300 mA, VDD = 3.8 V
IOUT = 1 mA
VDD = 10.8 V
VDD = 4.5 V
IOUT = 500 mA
VDD = 10.8 V
VDD = 4.5 V
IOUT = 300 mA, VDD = 3.8 V
INA = INB ≥ 2 V, VOUT = VDD = 13.2 V
VOUT = 0, VDD = 13.2 V
INA = INB ≥ 2 V
IOUT = 100 mA
IOUT = - 100 mA
10.40 10.56
4.00
4.20
10.60 10.68
4.25
4.35
3.63
3.70
0.24
0.40
V
0.30
0.50
0.12
0.20
0.15
0.25
0.10
0.17
0
- 10
0
10
µA
VDD + 0.7 VDD + 0.9 V
- 0.9
- 0.7
VDD Supply Current
Dynamic
IDD
IN = 100 kHz, VDD = 5.5 V
INA = INB = 4.5 V, VDD = 5.5 V
1.8
2.5
mA
75
125
µA
Propagation Delay Time
TPLH
TPHL
VDD = 5 V
300
nS
100
Notes:
a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. Maximum value measured at TJ = 135 °C. Typical value measured at TJ = TA = 25 °C (pulse width ≤ 300 µsec, duty cycle ≤ 2 %).
www.vishay.com
Document Number: 70864
2
S11-0800-Rev. E, 25-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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