SI4100DY-T1-E3 Ver la hoja de datos (PDF) - Vishay Semiconductors
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SI4100DY-T1-E3 Datasheet PDF : 10 Pages
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Si4100DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
0.14
TJ = 150 °C
0.12
10
0.10
ID = 4.4 A
TA = 125 °C
0.08
0.06
TA = 25 °C
TJ = 25 °C
0.04
0.02
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
4
5
6
7
8
9
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
4.0
50
3.6
40
3.2
30
ID = 250 µA
2.8
20
2.4
2.0
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
10
10
0
0.001 0.01
0.1
1
10
Time (s)
Single Pulse Power
100 600
100 µs
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4
1
1 ms
10 ms
0.1
TA = 25 C
Single Pulse
0.01
0.1
1
BVDSS Limited
10
100 ms
1s
10 s
DC
100
1000
VDS - Drain-to-Source Voltage (V)
* VGS minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 69251
S09-0220-Rev. B, 09-Feb-09
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