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SI4112G-BT

DUAL-BAND RF S YNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS

Silicon Laboratories 

Si4133G

Table 3. DC Characteristics

(VDD = 2.7 to 3.6 V, TA = –20 to 85°C

Parameter

Typical Supply Current1

RF1 Mode Supply Current1

RF2 Mode Supply Current1

IF Mode Supply Current1

Symbol

Test Condition

Min

Typ

RF1 and IF Operating —

18

—

13

—

12

—

10

Standby Current

High Level Input Voltage2

VIH

Low Level Input Voltage2

VIL

High Level Input Current2

IIH

Low Level Input Current2

IIL

High Level Output Voltage3

VOH

Low Level Output Voltage3

VOL

Notes:

1. RF1 = 1.55 GHz, RF2 = 1.2 GHz, IF = 800 MHz

2. For signals SCLK, SDATA, SENB, and PWDNB.

3. For signal AUXOUT.

PWDNB = 0

VIH = 3.6 V,

VDD = 3.6 V

VIL = 0 V,

VDD= 3.6 V

IOH = –500 µA

IOH = 500 µA

—

1

0.7 VDD —

—

—

–10

—

–10

—

VDD–0.4 —

—

—

Max Unit

31

mA

17

mA

17

mA

14

mA

—

µA

—

V

0.3 VDD

V

10

µA

10

µA

—

V

0.4

V

Rev. 1.1

5

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