SI4112 Ver la hoja de datos (PDF) - Unspecified

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Fabricante

SI4112

DUAL-BAND RF S YNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS

Unspecified 

Si4133

Electrical Specifications

Table 1. Recommended Operating Conditions

Parameter

Symbol Test Condition

Min

Typ

Max Unit

Ambient Temperature

TA

–40

25

85

°C

Supply Voltage

VDD

2.7

3.0

3.6

V

Supply Voltages Difference

V∆

(VDDR – VDDD),

–0.3

—

0.3

V

(VDDI – VDDD)

Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.

Typical values apply at nominal supply voltages and an operating temperature of 25°C unless otherwise stated.

Table 2. Absolute Maximum Ratings1,2

Parameter

Symbol

Value

Unit

DC Supply Voltage

VDD

–0.5 to 4.0

V

Input Current3

IIN

±10

mA

Input Voltage3

VIN

–0.3 to VDD+0.3

V

Storage Temperature Range

TSTG

–55 to 150

oC

Notes:

1. Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation

should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute

maximum rating conditions for extended periods may affect device reliability.

2. This device is a high performance RF integrated circuit with an ESD rating of < 2 kV. Handling and assembly of

this device should only be done at ESD-protected workstations.

3. For signals SCLK, SDATA, SENB, PWDNB and XIN.

4

Rev. 1.1

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