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componentes Descripción

Fabricante

SI3861

Integrated Load Switch

Fairchild Semiconductor 

Electrical Characteristics

Symbol

Parameter

Off Characteristics

BVIN

Vin Breakdown Voltage

ILoad

Zero Gate Voltage Drain Current

IFL

Leakage Current, Forward

IRL

Leakage Current, Reverse

On Characteristics (Note 2)

VON/OFF (th) Gate Threshold Voltage

RDS(on)

Static Drain–Source

On–Resistance (Q2)

RDS(on)

Static Drain–Source

On–Resistance (Q1)

TA = 25°C unless otherwise noted

Test Conditions

VON/OFF = 0 V, ID = –250 µA

VIN = 6.4 V, VON/OFF = 0 V

VON/OFF = 0 V, VIN = 8 V

VON/OFF = 0 V, VIN = –8 V

VIN = VON/OFF, ID = –250 µA

VIN = 4.5 V,

VIN = 2.5 V,

VIN = 1.8 V,

ID = –2.8A

ID = –2.5 A

ID = –2.0 A

VIN = 4.5 V,

VIN = 2.7 V,

ID = 0.4A

ID = 0.2 A

Min Typ Max Units

8

V

–1

µA

–100 nA

100 nA

0.4

0.9

1.5

V

34

55 mΩ

45

70

64

100

3.1

4

Ω

3.8

5

Drain–Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain–Source Diode Forward Current

VSD

Drain–Source Diode Forward

Voltage

VON/OFF = 0 V, IS = –0.6 A (Note 2)

–0.6

A

–1.2

V

Notes:

1. R θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting

surface of the drain pins. R θJC is guaranteed by design while R θJA is determined by the user’s board design.

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

Si3861DV Load Switch Application Circuit

IN

Q2

OUT

C1

R1

Q1

ON/OFF

LOAD

R2

External Component Recommendation:

For additional in-rush current control, R2 and C1 can be added. For more information, see application note AN1030.

Si3861DV Rev B(W)

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