SI2301BDS-T1(2003) Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
SI2301BDS-T1 Datasheet PDF : 5 Pages
| |||
Si2301BDS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
10
VGS = 5 thru 2.5 V
8
8
2V
6
6
Transfer Characteristics
TC = - 55_C
25_C
125_C
4
1.5 V
2
1V
0
0
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.5
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS - Gate-to-Source Voltage (V)
Capacitance
800
0.4
0.3
0.2
VGS = 2.5 V
0.1
0.0
0
VGS = 4.5 V
2
4
6
8
10
ID - Drain Current (A)
Gate Charge
5
VDS = 10 V
ID = 2.8 A
4
600
Ciss
400
200
Coss
Crss
0
0
4
8
12
16
20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
VGS = 4.5 V
ID = 2.8 A
1.4
3
1.2
2
1.0
1
0.8
0
0
1
2
3
4
5
Qg - Total Gate Charge (nC)
Document Number: 72066
S-31990—Rev. B, 13-Oct-03
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (_C)
www.vishay.com
3
Share Link: 