SGU2N60UFD Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
SGU2N60UFD Datasheet PDF : 8 Pages
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160
Common Emitter
V = 0V, f = 1MHz
GE
T = 25℃
C
120
Cies
80
Coes
40
Cres
0
1
10
30
Collector - Emitter Voltage, VCE [V]
Fig 7. Capacitance Characteristics
600
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 1.2A
TC = 25℃
TC = 125℃
Toff
Tf
Toff
100
Tf
50
10
100
500
Gate Resistance, RG [Ω ]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
100
Common Emitter
V = 300V, V = ± 15V
CC
GE
R
G
=
200Ω
TC = 25℃
TC = 125℃
Ton
Tr
10
0.5
1.0
1.5
2.0
2.5
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
100
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 1.2A
TC = 25℃
TC = 125℃
Ton
Tr
10
10
100
500
Gate Resistance, RG [Ω]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
100
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 1.2A
TC = 25℃
T = 125℃
C
Eon
Eoff
Eoff
10
5
10
100
500
Gate Resistance, RG [Ω]
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
VCC = 300V, VGE = ± 15V
RG = 200Ω
TC = 25℃
TC = 125℃
Toff
Toff
Tf
100
Tf
0.5
1.0
1.5
2.0
2.5
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGU2N60UFD Rev. A1
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