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Número de pieza
componentes Descripción
SGM2013 Ver la hoja de datos (PDF) - Sony Semiconductor
Número de pieza
componentes Descripción
Fabricante
SGM2013
GaAs N-channel Dual-Gate MES FET
Sony Semiconductor
SGM2013 Datasheet PDF : 5 Pages
1
2
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5
Electrical Characteristics
Item
Gate 1 to source current
Symbol
I
G1SS
Gate 2 to source current
I
G2SS
Drain saturation current
Gate 1 to source cut-off
voltage
Gate 2 to source cut-off
voltage
I
DSS
V
G1S
(OFF)
V
G2S
(OFF)
Forward transfer admittance gm
Input capacitance
Feedback capacitance
Noise figure
NF associated gain
Ciss
Crss
NF
Ga
Conditions
V
G1S
= –3V
V
G2S
= 0V
V
DS
= 0V
V
G2S
= –3V
V
G1S
= 0V
V
DS
= 0V
V
DS
= 2V
V
G1S
= 0V
V
G2S
= 0V
V
DS
= 2V
I
D
= 100µA
V
G2S
= 0V
V
DS
= 2V
I
D
= 100µA
V
G1S
= 0V
V
DS
= 2V
I
D
= 2mA
V
G2S
= 0.5V
f = 1kHz
V
DS
= 2V
I
D
= 2mA
V
G2S
= 0.5V
f = 1MHz
V
DS
= 2V
I
D
= 2mA
V
G2S
= 0.5V
f = 900MHz
SGM2013N
(Ta = 25°C)
Min.
Typ.
Max. Unit
–4 µA
–4 µA
4
16 mA
–1.5 V
–1.5 V
8
11
ms
0.55
1
pF
15
30
fF
1.4
2.5 dB
15
18
dB
Typical Characteristics
(Ta = 25°C)
20
(V
G2S
= 0.5V)
I
D
vs. V
DS
16
12
8
4
0
0
1
2
3
4
5
V
DS
– Drain to source voltage [V]
V
G1S
= 0V
–0.2V
–0.4V
–0.6V
–0.8V
–1.0V
6
20
(V
DS
= 2V)
I
D
vs. V
G1S
16
12
8
4
0
–2.0
–1.5
–1.0
–0.5
V
G1S
– Gate 1 to source voltage [V]
V
G2S
= 0.5V
0.25V
0V
–0.25V
–0.5V
–0.75V
–1.0V
0
–2–
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