100
T = 25℃ ━━
C
T = 100℃ ------
C
10
1
0.1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Forward Voltage, VFM [V]
Fig 13. Forward Characteristics
1.6
di/dt = -20A/㎲
1.4 TC = 25℃
1.2
1.0
trr
0.8
0.6
Irr
0.4
0.2
0.0
10
20
30
40
50
Forward Current, I F [A]
16
14
12
10
8
6
4
2
0
60
Fig 15. Reverse Recovery Characteristics vs.
Forward Current
250
T = 25 ℃
C
200
150
100
50
0
0.1
1
10
100
Reverse Voltage, VR [V]
Fig 17. Junction capacitance
©2002 Fairchild Semiconductor Corporation
1.2
120
IF = 60A
TC = 25℃
1.0
100
0.8
80
trr
0.6
60
0.4
40
0.2
0.0
0
20
Irr
0
40
80
120
160
200
240
di/dt [A/㎲ ]
Fig 14. Reverse Recovery Characteristics
vs. di/dt
1000
100
T = 25℃ ━━
C
T = 150℃ ------
C
10
1
0.1
0.01
1E-3
0
300
600
900
Reverse Voltage, VR [V]
Fig 16. Reverse Current vs. Reverse Voltage
SGL60N90DG3 Rev. A1