SGH40N60UFD Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
SGH40N60UFD Datasheet PDF : 8 Pages
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2500
2000
1500
Cies
Common Emitter
V = 0V, f = 1MHz
GE
T = 25℃
C
1000
500
Coes
Cres
0
1
10
30
Collector - Emitter Voltage, VCE [V]
Fig 7. Capacitance Characteristics
1000
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 20A
TC = 25℃
Toff
TC = 125℃
Tf
100
Tf
20
1
10
Gate Resistance, RG [Ω ]
100 200
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
200
100
Ton
Tr
10
10
Common Emitter
V = 300V, V = ± 15V
CC
GE
R
G
=
10Ω
T = 25℃
C
TC = 125℃
15
20
25
30
35
40
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
300
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 20A
TC = 25℃
TC = 125℃
100
Ton
Tr
10
1
10
Gate Resistance, RG [Ω ]
100 200
Fig 8. Turn-On Characteristics vs.
Gate Resistance
2000
Common Emitter
V = 300V, V = ± 15V
CC
GE
1000
IC = 20A
TC = 25℃
TC = 125℃
Eon
Eoff
Eon
Eoff
100
50
1
10
Gate Resistance, RG [Ω]
100 200
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
VCC = 300V, VGE = ± 15V
RG = 10Ω
TC = 25℃
T = 125℃
C
Toff
Tf
Toff
100
Tf
20
10
15
20
25
30
35
40
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGH40N60UFD Rev. A1
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