SGH30N60RUFD Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
SGH30N60RUFD Datasheet PDF : 8 Pages
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3500
3000
2500
Cies
Common Emitter
V = 0V, f = 1MHz
GE
TC = 25℃
2000
1500
Coes
1000
500
Cres
0
1
10
Collector - Emitter Voltage, VCE [V]
Fig 7. Capacitance Characteristics
1000
Common Emitter
V = 300V, V = ± 15V
CC
GE
I = 30A
C
T = 25℃ ━━
C
T = 125℃ ------
C
Toff
Toff
Tf
100
1
Tf
10
100
Gate Resistance, RG [Ω ]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
1000
Common Emitter
VGE = ± 15V, RG = 7Ω
TC = 25℃ ━━
TC = 125℃ ------
Ton
Tr
100
10
15
30
45
60
Collector Current, I [A]
C
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
1000
Common Emitter
V = 300V, V = ± 15V
CC
GE
IC = 30A
T = 25℃ ━━
C
Ton
TC = 125℃ ------
Tr
100
10
1
10
100
Gate Resistance, RG [Ω ]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
10000
Common Emitter
V = 300V, V = ± 15V
CC
GE
I = 30A
C
T = 25℃ ━━
C
T = 125℃ ------
C
1000
Eon
Eoff
Eoff
100
1
10
100
Gate Resistance, RG [Ω]
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
VGE = ± 15V, RG = 7Ω
TC = 25℃ ━━
T = 125℃ ------
C
Toff
Tf
Toff
100 Tf
15
30
45
60
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGH30N60RUFD Rev. B1
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