SFH617A-1 Ver la hoja de datos (PDF) - Vishay Semiconductors
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SFH617A-1 Datasheet PDF : 8 Pages
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VISHAY
200
150
Phototransistor
100
50
Diode
0
0 25 50 75 100 125 150
18483
Tamb – Ambient Temperature ( qC )
SFH617A
Vishay Semiconductors
Figure 1. Permissible Power Dissipation vs. Ambient Temperature
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
(IR GaAs)
Parameter
Forward voltage
Reverse current
Capacitance
Thermal resistance
Test condition
IF = 60 mA
VR = 6.0 V
VR = 0 V, f = 1.0 MHz
Symbol
Min
Typ.
Max
Unit
VF
1.25
1.65
V
IR
0.01
10
µA
CO
13
pF
Rthja
750
K/W
Output
(Si Phototransistor)
Parameter
Collector-emitter capacitance
Thermal resistance
Collector-emitter leakage
current
Test condition
VCE = 5 V, f = 1.0 MHz
VCE = 10 V
Part
Symbol Min
Typ.
Max
Unit
CCE
5.2
pF
Rthja
500
K/W
SFH617A-1 ICEO
2.0
50
nA
SFH617A-2
SFH617A-3
SFH617A-4
ICEO
ICEO
ICEO
2.0
50
nA
5.0
100
nA
5.0
100
nA
Coupler
Parameter
Collector-emitter saturation
voltage
Coupling capacitance
Test condition
IF = 10 mA, f = 1.0 MHz
Symbol
Min
Typ.
Max
Unit
VCEsat
0.4
0.25
V
CC
0.4
pF
Document Number 83740
Rev. 1.4, 26-Oct-04
www.vishay.com
3
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