2N6661 Ver la hoja de datos (PDF) - Supertex Inc
Número de pieza
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Fabricante
2N6661 Datasheet PDF : 3 Pages
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2N6660/2N6661
Electrical Characteristics (TC = 25°C unless otherwise specified)
Symbol Parameter
Min Typ Max
Units Conditions
BVDSS
Drain-to-source break-
down voltage
2N6660 60
2N6661 90
-
-
-
-
V
VGS = 0V, ID = 10µA
VGS(th)
ΔVGS(th)
Gate threshold voltage
VGS(th) change with temperature
0.8
-
2.0
V
VGS = VDS, ID = 1.0mA
-
-3.8
-5.5 mV/OC VGS = VDS, ID = 1.0mA
IGSS
Gate body leakage current
-
-
100
nA VGS = ±20V, VDS = 0V
IDSS
Zero gate voltage drain current
-
-
10
VGS = 0V, VDS = Max rating
-
-
500
µA VDS = 0.8 Max Rating,
VGS = 0V, TA = 125OC
ID(ON) ON-state drain current
1.5
-
-
A
VGS = 10V, VDS = 10V
RDS(ON)
Static drain-to-source
ON-state resistance
All
-
2N6660
-
2N6661
-
-
5.0
VGS = 5.0V, ID = 0.3A
-
3.0
Ω
VGS = 10V, ID = 1.0A
-
4.0
VGS = 10V, ID = 1.0A
GFS
Forward transconductance
170
-
-
mmho VDS = 25V, ID = 0.5A
CISS
Input capacitance
-
C
Common source output capacitance
-
OSS
CRSS Reverse transfer capacitance
-
-
50
VGS = 0V,
-
40
pF V = 24V,
DS
-
10
f = 1.0MHz
t(ON)
t(OFF)
Turn-ON time
Turn-OFF time
-
-
-
10
-
10
ns
VDD = 25V, ID = 1.0A,
RGEN = 25Ω
VSD
Diode forward voltage drop
-
1.2
-
V
VGS = 0V, ISD = 1.0A
trr
Reverse recovery time
-
350
-
ns
VGS = 0V, ISD = 1.0A
Notes:
1.All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Thermal Characteristics
Device
Package
ID
(continuous)*
(mA)
ID
(pulsed)
(A)
Power Dissipation
@TC = 25OC
(W)
θjc
(OC/W)
θja
(OC/W)
IDR*
(mA)
IDRM
(A)
2N6660 TO-39
410
3.0
6.25
20
125
410
3.0
2N6661 TO-39
350
3.0
Notes:
* ID (continuous) is limited by max rated TJ.
6.25
20
125
350
3.0
Switching Waveforms and Test Circuit
10V
INPUT
90%
0V 10%
t(ON)
t(OFF)
td(ON)
tr
td(OFF)
tF
VDD
OUTPUT
0V
10%
90%
10%
90%
PULSE
GENERATOR
RGEN
INPUT
VDD
RL
OUTPUT
D.U.T.
2
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