2N6661 Ver la hoja de datos (PDF) - Supertex Inc
Número de pieza
componentes Descripción
Fabricante
2N6661 Datasheet PDF : 3 Pages
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2N6660/2N6661
N-Channel Enhancement-Mode
Vertical DMOS FETs
Features
► Free from secondary breakdown
► Low power drive requirement
► Ease of paralleling
► Low CISS and fast switching speeds
► Excellent thermal stability
► Integral Source-Drain diode
► High input impedance and high gain
► Complementary N- and P-Channel devices
Applications
► Motor controls
► Converters
► Amplifiers
► Switches
► Power supply circuits
► Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
General Description
The Supertex 2N6660 and 2N6661 are enhancement-
mode (normally-off) transistors that utilizes a vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices
with the power handling capabilities of bipolar transistors,
and the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of
all MOS structures, these devices are free from thermal
runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Ordering Information
Device
Package
2N6660
2N6661
TO-39
TO-39
BVDSS/BVDGS
(V)
60
90
RDS(ON)
(max)
(Ω)
3.0
4.0
ID(ON)
(min)
(A)
1.5
1.5
Absolute Maximum Ratings
Parameter
Value
Drain to source voltage
Drain to gate voltage
Gate to source voltage
BVDSS
BVDGS
±20V
Operating and storage temperature -55°C to +150°C
Soldering temperature1
+300°C
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Note 1. Distance of 1.6mm from case for 10 seconds.
Pin Configuration
DGS
TO-39
Case: DRAIN
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