SEMIX303GD12VC Ver la hoja de datos (PDF) - Semikron
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componentes Descripción
Fabricante
SEMIX303GD12VC Datasheet PDF : 5 Pages
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SEMiX303GD12Vc
SEMiX® 33c
SEMiX303GD12Vc
Features
• Homogeneous Si
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• Dynamic values apply to the
following combination of resistors:
RGon,main = 1,0
RGoff,main = 1,0
RG,X = 2,2
RE,X = 1,0
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
ICnom
ICRM
VGES
tpsc
Tj
ICRM = 3xICnom
VCC = 600 V
VGE ≤ 15 V
VCES ≤ 1200 V
Tj = 125 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tterminal = 80 °C
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
IC = 300 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 12 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
Tj = 150 °C
IC = 300 A
VGE = ±15 V
RG on = 2.1
RG off = 2.1
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dton = 4200 A/µs Tj = 150 °C
di/dtoff = 2600 A/µs
du/dtoff = 6600 V/ Tj = 150 °C
µs
per IGBT
Values
1200
448
342
300
900
-20 ... 20
10
-40 ... 175
327
244
300
900
1485
-40 ... 175
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
5.5
typ.
1.75
2.2
0.94
0.88
2.7
4.4
6
0.1
18.0
1.77
1.77
3300
2.50
470
72
26.5
665
109
36.3
max. Unit
2.2
V
2.5
V
1.04
V
0.98
V
3.9
m
5.1
m
6.5
V
0.3
mA
mA
nF
nF
nF
nC
ns
ns
mJ
ns
ns
mJ
0.1
K/W
GD
© by SEMIKRON
Rev. 2 – 16.02.2011
1
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