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IXFN25N90(2000) Ver la hoja de datos (PDF) - IXYS CORPORATION

Número de pieza
componentes Descripción
Fabricante
IXFN25N90
(Rev.:2000)
IXYS
IXYS CORPORATION IXYS
IXFN25N90 Datasheet PDF : 4 Pages
1 2 3 4
HiPerFETTM Power MOSFETs
Single Die MOSFET
IXFN 26N90
IXFN 25N90
VDSS
900 V
900 V
ID (cont)
26 A
25 A
RDS(on)
0.30 W
0.33 W
trr
250 ns
250 ns
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
D
G
Preliminary data sheet
S
S
Symbol
V
DSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
E
AS
dv/dt
PD
TJ
TJM
Tstg
TJ
VISOL
Md
Test Conditions
T
J
= 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
T
C
= 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.63 in) from case for 10 s
50/60 Hz, RMS t = 1 min
IISOL£ 1 mA
t=1s
Mounting torque
Terminal connection torque
Maximum Ratings
26N90
25N90
26N90
25N90
26N90
25N90
900
V
900
V
±20
V
±30
V
26
A
25
104
A
100
26
A
25
64
mJ
3
J
5 V/ns
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
600
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
-
°C
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Features
International standard package
miniBLOC, with Aluminium nitride
isolation
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Weight
30
g
Applications
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GH(th)
IGSS
IDSS
RDS(on)
V = 0 V, I = 3 mA
GS
D
V = V , I = 8 mA
DS
GS D
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
900
3.0
26N90
25N90
V
5.0 V
±200 nA
100 mA
2 mA
0.30 W
0.33 W
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
Easy to mount
Space savings
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
97526E (10/99)
1-4

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