MRFIC0917 Ver la hoja de datos (PDF) - Motorola => Freescale

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MRFIC0917

900 MHz GSM CELLULAR INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT

Motorola => Freescale 

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MRFIC0917/D

The MRFIC Line

900 MHz GaAs Integrated

Power Amplifier

This integrated circuit is intended for GSM class IV handsets. The device is

specified for 2.5 Watts output power and 43% minimum power added

efficiency under GSM signal conditions at 3.6 Volt supply voltage. To achieve

this superior performance, Motorola’s planar GaAs MESFET process is

employed. The device is packaged in the PFP–16 Power Flat Pack package

which gives excellent thermal performance through a solderable backside

contact.

• Usable Frequency Range 800 to 1000 MHz

• Typical Output Power: 34.5 dBm @ 3.6 Volts

• 43% Minimum Power Added Efficiency

• Low Parasitic, High Thermal Dissipation Package

• Order MRFIC0917R2 for Tape and Reel.

R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.

• Device Marking = M0917

MRFIC0917

900 MHz

GSM CELLULAR

INTEGRATED POWER AMPLIFIER

GaAs MONOLITHIC

INTEGRATED CIRCUIT

CASE 978–02

(PFP–16)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Rating

Supply Voltage, Normal Conditions

Supply Voltage under Load Stress

RF Input Power

Gate Voltage

Ambient Operating Temperature

Storage Temperature

Thermal Resistance, Junction to Case

Symbol

VD1, VD2

VD1, VD2

Pin

VSS

TA

Tstg

RθJC

Value

6

4.5

15

–6

–40 to + 85

– 65 to +150

15

Unit

Vdc

Vdc

dBm

Vdc

°C

°C

°C/W

GND 9

VD1 10

GND 11

VG2 12

VG1 13

GND 14

RF IN 15

N/C 16

8 N/C

7 VD2

6 GND

5 RF OUT

4 RF OUT

3 RF OUT

2 VSS

1 GND

Pin Connections and Functional Block Diagram

©MOMoTtoOroRlaO, ILncA. 1R99F8 DEVICE DATA

MRFIC0917

1

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