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SDR6006 Ver la hoja de datos (PDF) - Solid State Devices, Inc.

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SDR6006 Datasheet PDF : 3 Pages
1 2 3
PRELIMINARY
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SDR60
__ __ __ __
│ │ │ Screening2/ _ = Not Screened
│││
TX = TX Level
│││
TXV = TXV
│││
S = S Level
│││
│ │ Package
M = TO-254
││
Z = TO-254Z
││
N = TO-258
││
P = TO-259
Configuration n/a (single diode)
Voltage 04 = 400 V
05 = 500 V
06 = 600 V
SDR6006 series
60Apk 60nsec
400 to 600 V
Ultrafast Rectifier
Features:
Ultrafast Recovery: 100nsec Maximum
High Surge Rating
Low Reverse Leakage Current
Low Junction Capacitance
Hermetically Sealed, Isolated Package
providing enhanced thermal performance
Eutectic Die Attach
TX, TXV, and S Level Screening iaw MIL-
PRF-19500 Available
hyperfast version available (typ 30 ns)
Maximum Ratings
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, TC = 100 °C)
Continuous Rectified Forward Current
(TC = 25 °C; limited by construction)
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, TA = 25 °C, 1 pulse)
Operating & Storage Temperature
Maximum Total Thermal Resistance
Junction to Case
TO-254 (M)
TO-254Z (Z)
SDR6004
SDR6005
SDR6006
Symbol
VRRM
Io
IF
IFSM
TOP & TSTG
RθJC
TO-258
Value
400
500
600
60
Units
Volts
Amps, pk
45
Amps
500
-65 to +200
1.0
(0.7 typ)
Amps
ºC
ºC/W
TO-259
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0121A
DOC

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