SDM4435 Ver la hoja de datos (PDF) - Samhop Mircroelectronics

Número de pieza

componentes Descripción

Fabricante

SDM4435

P-Channel Enhancement Mode MOSFET

Samhop Mircroelectronics 

S DM4435

E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)

P a ra meter

S ymbol Condition

DRAIN-SOURCE DIODE CHARACTERISTICS b

Diode Forward Voltage

VSD VGS = 0V, Is =-1.7A

Min Typ C Max Unit

-0.74 -1.2 V

Notes

a.Surface Mounted on FR 4 Board, t <=10sec.

b.P ulse Test:P ulse Width<=300us, Duty C ycle<= 2%.

c.Guaranteed by design, not subject to production testing.

10

-V G S =4V

8

-V G S =10,9,8,7,6,5V

6

4

2

0

0

2

4

6

-V G S =3V

8 10 12

-V DS , Drain-to-S ource Voltage (V )

F igure 1. Output C haracteris tics

25

125 C 25 C -55 C

20

15

10

5

0

0 0.4 1.8 1.2 1.6 2.0 2.4

-V G S , G ate-to-S ource Voltage (V )

F igure 2. Trans fer C haracteris tics

1400

C is s

1150

900

750

500

C oss

250

C rss

0

0 5 10 15 20 25 30

-V DS , Drain-to S ource Voltage (V )

F igure 3. C apacitance

1.8

V G S =-10V

1.6

ID=-8A

1.4

1.2

1.0

0.8

0.6

-55 -25 0 25 50 75 100 125

T j, J unction T emperature ( C )

F igure 4. On-R es is tance Variation with

Te mpe ra ture

3

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