HV300 Ver la hoja de datos (PDF) - Supertex Inc

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componentes Descripción

Fabricante

HV300

Hotswap, Inrush Current Limiter Controllers (Negative Supply Rail)

Supertex Inc 

HV300/HV310

Electrical Characteristics (VIN=-10V to -90V, -40°C ≤ TA ≤ +85°C unless otherwise noted)

Symbol

Parameters

Min

Typ

Max

Unit

Conditions

Supply (Referenced to VDD pin)

VEE

Supply Voltage

IEE

Supply Current

IEE

Standby Mode Supply Current

-90

-10

V

550

650

330

400

µA VEE = -48V, Mode = Limiting

µA VEE = -48V, Mode = Standby

OV and UV Control (Referenced to VEE pin)

VUVH

UV High Threshold

VUVL

UV Low Threshold

VUVHY

UV Hysteresis

IUV

UV Input Current

VOVH

OV High Threshold

VOVL

OV Low Threshold

VOVHY

OV Hysteresis

IOV

OV Input Current

1.26

1.16

100

1.0

1.26

1.16

100

1.0

V Low to High Transition

V High to Low Transition

mV

nA VUV = VEE + 1.9V

V Low to High Transition

V High to Low Transition

mV

nA VOV = VEE + 0.5V

Current Limit (Referenced to VEE pin)

VSENSE

Current Limit Threshold Voltage

40

50

60

mV VUV = VEE + 1.9V,

VOV = VEE + 0.5V

Gate Drive Output (Referenced to VEE pin)

VGATE

Maximum Gate Drive Voltage

IGATEUP

Gate Drive Pull-Up Current

IGATEDOWN Gate Drive Pull-Down Current

9.0

10

11

V VUV = VEE + 1.9V,

VOV = VEE + 0.5V

500

µA VUV = VEE + 1.9V,

VOV = VEE + 0.5V,

40

mA VUV = VEE, VOV = VEE + 0.5V

Timing Control – Test Conditions: C =100µF, CRAMP=10nF, VUV = VEE+1.9V, VOV= VEE+0.5V, External MOSFET is IRF530*

IRAMP

Ramp Pin Output Current

10

µA VSENSE = 0V

tPOR

Time from UV to Gate Turn On

2.0

ms (Note 1)

tRISE

Time from Gate Turn On to VSENSE Limit

400

µs

tLIMIT

Duration of Current Limit Mode

5.0

ms

tPWRGD

Time from Current Limit to PWRGD

5.0

ms

VRAMP

Voltage on Ramp Pin in Current Limit Mode

3.6

V (Note 2)

Power Good Output (Referenced to VEE pin)

VPWRGD

Power Good Pin Breakdown Voltage

VPWRGD

Power Good Pin Output Low Voltage

90

V

0.5

0.8

V

IPWRGD = 1mA

Dynamic Characterstics

tGATEHLOV

tGATEHLUV

OV Delay

UV Delay

500

ns

500

ns

Note 1: This timing depends on the threshold voltage of the external N-Channel MOSFET. The higher its threshold is, the longer this timing.

Note 2: This voltage depends on the characteristics of the external N-Channel MOSFET. VGS(th) = 3V for an IRF530.

*IRF530 is a registered trademark of International Rectifier.

2

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