SD1429 Ver la hoja de datos (PDF) - Microsemi Corporation
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SD1429 Datasheet PDF : 4 Pages
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RF PRODUCTS DIVISION
SD1429
RF & MICROWAVE TRANSISTORS
PRODUCT PREVIEW
DESCRIPTION
The SD1429 is a 12.5 V Class C epitaxial silicon NPN planar
transistor designed primarily for UHF communications. This device
utilizes “Tuned Q” technology which consists of an input matching
network on the base to achieve optimum gain and broadband
characteristics.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
! 470 MHz
! 12.5 Volts
! Common Emitter
! POUT = 12 W Min.
! GP = 7.8 dB Gain
APPLICATIONS/BENEFITS
! UHF Mobile
Applications
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)
Symbol
Parameter
Value
Unit
VCBO Collector-Base Voltage
36
V
VCEO Collector-Emitter Voltage
16
V
VCES Collector-Emitter Voltage
36
V
VEBO Emitter-Base Voltage
4.0
V
IC
Device Current
3.4
A
PDISS
Power Dissipation
37.5
W
TJ
Junction Temperature
+200
°C
TSTG Storage Temperature
-65 to +150 °C
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance 4.6
°C/W
.500 6LFL (M111)
EPOXY SEALED
PIN CONNECTION
41
23
1. Collector 3. Base
2. Emitter
4. Emitter
Copyright 2000
MSC1644.PDF 2000-12-20
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
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