Philips Semiconductors
2.5 GHz sigma delta fractional-N /
760 MHz IF integer frequency synthesizers
Product data
SA8028
SYMBOL PARAMETER
CONDITIONS
Phase noise (condition RSET = 7.5 kΩ, CP = 00, non speed-up mode)
L(f)
Synthesizer’s contribution to close-in phase
fREF = 13 MHz, TCXO,
noise of 900 MHz RF signal at 5 kHz offset.
fCOMP = 13 MHz
indicative, not tested
MIN.
–
Synthesizer’s contribution to close-in phase
As above
–
noise of 1800 MHz RF signal at 5 kHz offset.
Synthesizer’s contribution to close-in phase
noise of 800 MHz RF signal at 5 kHz offset.
fREF = 19.44/19.68 MHz, TCXO, –
fCOMP = 19.44/19.68 MHz
indicative, not tested
Synthesizer’s contribution to close-in phase
As above
–
noise of 2100 MHz RF signal at 5 kHz offset.
Interface logic input signal levels
VIH
HIGH level input voltage
0.7*VDD
VIL
LOW level input voltage
–0.3
ILEAK
Input leakage current
VDD = 3 V, VIH = 3 V,
VIL = 0 V
–0.5
Lock detect output signal (in push/pull mode) and Data output signal (in readout test mode)
VOL
LOW level output voltage
VOH
HIGH level output voltage
Isink = 2 mA
Isource = –2 mA
–
VDD–0.4
NOTES:
V
1.
ISET =
SET
RSET
bias current for charge pumps.
2. The relative output current variation is defined as:
∆IZOUT
IZOUT
= 2 × ( I 2 – I 1) ;
| I2 + I1 |
TYP.
–99
–93
–101
–93
–
–
–
–
–
With I1 @ V1 = 0.6 V, I2 @V2 = VDDCP – 0.7 V (see Figure 3).
IZOUT
CURRENT
I2
I1
MAX.
–
UNIT
dBc/Hz
–
dBc/Hz
–
dBc/Hz
–
dBc/Hz
VDD+0.3 V
0.3*VDD V
+0.5
µA
0.4
V
–
V
VOLTAGE
V1
V2
VPH
I2
I1
Figure 3. Relative output current variation.
SR00602
2002 Feb 22
7