DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

SA572D Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza
componentes Descripción
Fabricante
SA572D
ON-Semiconductor
ON Semiconductor ON-Semiconductor
SA572D Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
SA572
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Supply Voltage
Operating Temperature Range
Operating Junction Temperature
Power Dissipation
Thermal Resistance, JunctiontoAmbient
N Package
D Package
DTB Package
VCC
TA
TJ
PD
RqJA
22
40 to +85
150
500
75
105
133
VDC
°C
°C
mW
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
DC ELECTRICAL CHARACTERISTICS Standard test conditions, VCC = 15 V, TA = 25°C; Expandor mode (see Test Circuit). Input
signals at unity gain level (0 dB) = 100 mVRMS at 1.0 kHz; V1 = V2; R2 = 3.3 kW; R3 = 17.3 kW, unless otherwise noted.
Characteristic
Symbol
Test Conditions
Min
Typ
Max
Unit
Supply Voltage
Supply Current
Internal Voltage Reference
Total Harmonic Distortion (Untrimmed)
Total Harmonic Distortion (Trimmed)
Total Harmonic Distortion (Trimmed)
VCC
6.0
ICC
No Signal
VR
2.3
THD
1.0 kHz, CA = 1.0 mF
THD
1.0 kHz, CR = 10 mF
THD
100 Hz
2.5
0.2
0.05
0.25
22
VDC
6.3
mA
2.7
VDC
1.0
%
%
%
No Signal Output Noise
Input to V1 and V2
grounded (2020 kHz)
6.0
25
mV
DC Level Shift (Untrimmed)
Unity Gain Level
Input change from no
signal to 100 mVRMS
1.5
"20
0
"50
mV
+1.5
dB
Large-Signal Distortion
Tracking Error
(Measured relative to value at unity gain) =
[VOVO (unity gain)] dBV2dB
Channel Crosstalk
V1 = V2 = 400 mV
Rectifier Input
V2 = +6.0 dB, V1 = 0 dB
V2 = 30 dB, V1 = 0 dB
200 mVRMS into
60
channel A, measured
output on channel B
0.7
3.0
%
"0.2
dB
"0.5
2.5, +1.6
dB
dB
Power Supply Rejection Ratio
PSRR
120 Hz
70
dB
2.2mF
V1
(7,9) 6.8kW
DG
5W
CR = 10mF
(2,14)
CA = 1mF
(4,12)
BUFFER
(5,11)
82kW
1%
R3
17.3kW
1mF
100W
22mF
+
15V
270pF
NE5234
2.2k
V0
(6,10)
+
1kW
+
2.2mF
(8)
2.2mF 3.3kW (3,13)
V2
R2
1%
RECTIFIER
(1,15)
(16)
0.1mF
+
22mF
+15V
Figure 2. Test Circuit
http://onsemi.com
3

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]