2223-9A Ver la hoja de datos (PDF) - GHz Technology
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2223-9A Datasheet PDF : 3 Pages
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2223-9A
9 Watts - 24 Volts, Class C
Microwave 2200 - 2300 MHz
GENERAL DESCRIPTION
The 2223-9 is a COMMON BASE transistor capable of providing 9 Watts of
Class C, RF output power over the band 2200 - 2300 MHz. This transistor is
designed for Microwave Broadband Class C amplifier applications. It includes
input and output prematching and utilizes Gold metalization and diffused
ballasting to provide high reliability and supreme ruggedness. The transistor
uses a fully hermetic High Temperature Solder sealed package.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC
29 Watts
Maximum Voltage and Current
BVces Collector to Emiter Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
45 Volts
3.5 Volts
1.5 Amps
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 200oC
+ 200oC
CASE OUTLINE
55AW, STYLE 1
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL CHARACTERISTICS
TEST
CONDITIONS
Pout
Pin
Pg
ηc
VSWR
Power Output
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
F =2.2 - 2.3 GHz
Vcc = 24 Volts
MIN TYP MAX UNITS
9
8.0
40
Watts
1.5
Watts
dB
%
10:1
BVces
BVebo
Hfe
Cob
θjc
Collector to Base Breakdown Ic = 50 mA
40
Emitter to Base Breakdown
Ie = 10 mA
3.5
Current Gain
Vce = 5 V, Ic= 160mA 10
Output Capacitance*
Vcb = 28V, 1MHz
Thermal Resistance
Tc = 25 oC
* Not measureable due to internal prematch network
Volts
Volts
100
pF
6.0
oC/W
August 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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