S505TXRW Ver la hoja de datos (PDF) - Vishay Semiconductors
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S505TXRW Datasheet PDF : 6 Pages
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S505TX/S505TXR/S505TXRW
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak
current
Gate 1 - source voltage
Gate 2 - source voltage
Total power dissipation
Channel temperature
Storage temperature range
Tamb ≤ 60 °C
Symbol
Value
Unit
VDS
8
V
ID
30
mA
± IG1/G2SM
10
mA
+ VG1S
6
V
- VG1S
1.5
V
± VG2SM
6
V
Ptot
200
mW
TCh
150
°C
Tstg
- 55 to + 150
°C
Maximum Thermal Resistance
Parameter
Test condition
Symbol
Value
Unit
Channel ambient
1)
RthChA
450
K/W
1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Drain - source breakdown
ID = 10 μA, VG1S = VG2S = 0
V(BR)DSS
12
V
voltage
Gate 1 - source breakdown
± IG1S = 10 mA, VG2S = VDS = 0 ± V(BR)G1SS
7
voltage
10
V
Gate 2 - source breakdown
± IG2S = 10 mA, VG1S = VDS = 0 ± V(BR)G2SS
7
voltage
10
V
Gate 1 - source leakage current + VG1S = 5 V, VG2S = VDS = 0
+ IG1SS
20
nA
Gate 2 - source leakage current ± VG2S = 5 V, VG1S = VDS = 0
± IG2SS
20
nA
Drain - source operating current VDS = VRG1 = 5 V, VG2S = 4 V,
IDSO
8
RG1 = 56 kΩ
14
20
mA
Gate 1 - source cut-off voltage VDS = 5 V, VG2S = 4, ID = 20 μA VG1S(OFF)
0.5
1.3
V
Gate 2 - source cut-off voltage VDS = VRG1 = 5 V, RG1 = 56 kΩ, VG2S(OFF)
0.8
1.0
1.4
V
ID = 20 μA
Remark on improving intermodulation behavior:
By setting RG1 smaller than 56 kΩ, typical value of IDSO will raise and improved intermodulation behavior will be performed.
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 56 kΩ, ID = IDSO, f = 1 MHz
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward transadmittance
|y21s|
27
30
35
mS
Gate 1 input capacitance
Cissg1
1.8
2.2
pF
Feedback capacitance
Crss
20
30
fF
Output capacitance
Coss
1.0
pF
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Document Number 85080
Rev. 1.3, 05-Sep-08
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