RTF015N03
Datasheet
lThermal resistance
Parameter
Symbol
Values
Unit
Min. Typ. Max.
RthJA*2
-
- 156 ℃/W
Thermal resistance, junction - ambient
RthJA*3
r lElectrical characteristics (Ta = 25°C)
fo Parameter
Symbol
Conditions
Drain - Source breakdown
d voltage
V(BR)DSS VGS = 0V, ID = 1mA
e Breakdown voltage
d temperature coefficient
ΔV(BR)DSS ID = 1mA
ΔTj referenced to 25℃
n s Zero gate voltage
drain current
IDSS VDS = 30V, VGS = 0V
e n Gate - Source leakage current IGSS VGS = 12V, VDS = 0V
m ig Gate threshold voltage
Gate threshold voltage
s temperature coefficient
VGS(th) VDS = 10V, ID = 1mA
ΔVGS(th) ID = 1mA
ΔTj referenced to 25℃
om e Static drain - source
c D on - state resistance
VGS = 4.5V, ID = 1.5A
RDS(on)*4 VGS = 4.0V, ID = 1.5A
VGS = 2.5V, ID = 1.5A
e Gate resistance
RG f = 1MHz, open drain
w Forward Transfer
R e Admittance
|Yfs|*4 VDS = 10V, ID = 1.5A
-
- 167 ℃/W
Values
Unit
Min. Typ. Max.
30 -
-
V
-
29
- mV/℃
-
-
1 μA
-
- 10 μA
0.5 - 1.5 V
- -1.6 - mV/℃
- 170 240
- 180 250 mΩ
- 240 340
-
17 -
Ω
1.5 -
-
S
ot N *1 Pw≦10μs , Duty cycle≦1%
N*2 Mounted on a ceramic board (30x30x0.8mm)
*3 Mounted on a FR4 (25x25x0.8mm)
*4 Pulsed
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/11
20151109 - Rev.001