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RTF015N03TL(2009) Ver la hoja de datos (PDF) - ROHM Semiconductor

Número de pieza
componentes Descripción
Fabricante
RTF015N03TL
(Rev.:2009)
ROHM
ROHM Semiconductor ROHM
RTF015N03TL Datasheet PDF : 4 Pages
1 2 3 4
RTF015N03
zElectrical characteristics curves
Data Sheet
1000
tf
100
td(off)
Ta=25°C
VDD=15V
VGS=4.5V
RG=10
Pulsed
10 td(on)
tr
1
0.01
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.1 Switching Characteristics
6
Ta=25°C
VDD=15V
5 ID=1.5A
RG=10
Pulsed
4
3
2
1
0
0
0.5
1
1.5
2
TOTAL GATE CHARGE : Qg (nC)
Fig.2 Dynamic Input Characteristics
10
1
Ta=125°C
75°C
25°C
25°C
0.1
VDS=10V
Pulsed
0.01
0.001
0.0
0.5
1.0
1.5
2.0
2.5
GATE-SOURCE VOLTAGE : VGS (V)
Fig.3 Typical Transfer Characteristics
1.0
Ta=25°C
0.9
Pulsed
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 1 2 3 4 5 6 7 8 9 10
GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Static Drain-Source
On-State Resistance vs.
Gate source Voltage
10
VGS=4.0V
Pulsed
10
Ta=125°C
1
75°C
25°C
25°C
0.1
VGS=0V
Pulsed
0.01
0.0
0.5
1.0
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.5 Source Current vs.
Source-Drain Voltage
10
VGS=2.5V
Pulsed
10
VGS=4.5V
Pulsed
1
Ta=125°C
75°C
25°C
25°C
0.1
0.01
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.6 Static Drain-Source
On-State Resistance
vs. Drain Current ( Ι )
10
Ta=25°C
Pulsed
1
Ta=125°C
75°C
25°C
25°C
0.1
0.01
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙ )
1
Ta=125°C
75°C
25°C
25°C
0.1
0.01
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙΙ )
1
VGS=2.5V
VGS=4V
VGS=4.5V
0.1
0.01
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current ( Ι )
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2009.03 - Rev.A

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